Methods of forming transistors

ABSTRACT

Some embodiments include methods of forming transistors. Recesses are formed to extend into semiconductor material. The recesses have upper regions lined with liner material and have segments of semiconductor material exposed along lower regions. Semiconductor material is isotropically etched through the exposed segments which transforms the recesses into openings having wide lower regions beneath narrow upper regions. Gate dielectric material is formed along sidewalls of the openings. Gate material is formed within the openings and over regions of the semiconductor material between the openings. Insulative material is formed down the center of each opening and entirely through the gate material. A segment of gate material extends from one of the openings to the other, and wraps around a pillar of the semiconductor material between the openings. The segment is a gate of a transistor. Source/drain regions are formed on opposing sides of the gate.

TECHNICAL FIELD

Methods of forming transistors.

BACKGROUND

Transistors are commonly utilized in integrated circuits, and may havemany applications throughout memory, logic, etc. For instance,transistors may be utilized in dynamic random access memory (DRAM)arrays, NAND flash, etc.

A continuing goal of integrated circuit fabrication is to create higherlevels of integration, and accordingly to reduce size and spacing ofexisting components. It is becoming increasingly difficult to reduce thesize of transistors due to short channel effects and othercomplications.

Transistor performance may be characterized by numerous metrics,including, for example, current flow through the on state (I_(on)) ofthe transistor and current flow through the off state (I_(off)) of thetransistor. It is desired to have high I_(on) without leakage so thatcurrent is controlled and relatively unimpeded when the transistor is inthe on state; and it is desired to have low I_(off). Often there may besome level of leakage through transistors, especially as the transistorsbecome increasingly smaller. An example leakage mechanism is hotelectron induced punchthrough (HEIP), which can be particularlyproblematic in transistors having short channels.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1 and 1A are a cross-sectional side view and a top view,respectively, of a construction comprising an example embodimenttransistor. The view of FIG. 1 is along the line 1-1 of FIG. 1A, and theview of FIG. 1A is along the line 1A-1A of FIG. 1.

FIGS. 2 and 2A are a cross-sectional side view and a top view,respectively, of a construction comprising another example embodimenttransistor. The view of FIG. 2 is along the line 2-2 of FIG. 2A, and theview of FIG. 2A is along the line 2A-2A of FIG. 2.

FIG. 3 is a cross-sectional side view of a construction comprising aplurality of transistors of the type shown in FIGS. 1 and 1A.

FIG. 4 is a cross-sectional side view of a construction comprising aplurality of transistors of the type shown in FIGS. 2 and 2A.

FIGS. 5-12 are diagrammatic cross-sectional views of various processstages of an example embodiment method of forming a plurality oftransistors. FIG. 12A is a top view of the construction of FIG. 12. Theview of FIG. 12 is along the line 12-12 of FIG. 12A, and the view ofFIG. 12A is along the line 12A-12A of FIG. 12.

FIGS. 13-20 are diagrammatic cross-sectional views of various processstages of another example embodiment method of forming a plurality oftransistors. FIG. 20A is a top view of the construction of FIG. 20. Theview of FIG. 20 is along the line 20-20 of FIG. 20A, and the view ofFIG. 20A is along the line 20A-20A of FIG. 20.

DETAILED DESCRIPTION OF THE ILLUSTRATED EMBODIMENTS

Some embodiments include new methods of forming transistors. Exampletransistors that may be formed with such methods are described withreference to FIGS. 1 and 2.

Referring to FIGS. 1 and 1A, a construction 10 is shown incross-sectional side view (FIG. 1) and top view (FIG. 1A). Theconstruction includes a pillar 14 of semiconductor material 12.

Semiconductor material 12 may comprise any suitable compositionincluding, for example, silicon, germanium, silicon/carbon,silicon/germanium, etc. In some embodiments, the semiconductor material12 may comprise, consist essentially of, or consist of monocrystallinesilicon. The semiconductor material 12 may be considered to be part of asemiconductor substrate. The term “semiconductor substrate” means anyconstruction comprising semiconductive material, including, but notlimited to, bulk semiconductive materials such as a semiconductive wafer(either alone or in assemblies comprising other materials), andsemiconductive material layers (either alone or in assemblies comprisingother materials). The term “substrate” refers to any supportingstructure, including, but not limited to, the semiconductor substratesdescribed above. In some embodiments, material 12 may be part of asemiconductor substrate containing one or more materials associated withintegrated circuit fabrication. Some of the materials may be under theshown region of material 12 and/or may be laterally adjacent the shownregion of material 12; and may correspond to, for example, one or moreof refractory metal materials, barrier materials, diffusion materials,insulator materials, etc.

Electrically insulative material 16 is along sidewalls of pillar 14. Theelectrically insulative material may comprise any suitable compositionor combination of compositions. In some embodiments, material 16 maycomprise one or both of silicon dioxide and silicon nitride. Forinstance, material 16 may comprise primarily silicon nitride, but mayadditionally comprise a thin layer of silicon dioxide between thesilicon nitride and surfaces of semiconductor material 12.

The pillar 14 comprises a first wide region 18, a narrow region 20, anda second wide region 22. In some embodiments, narrow region 20 may bereferred to as a waist region. Gate dielectric material 24 extends alongan upper portion of the pillar 14; and specifically extends along anupper part of the first wide region 18 and along an entirety of thenarrow region 20 and second wide region 22.

The gate dielectric material may comprise any suitable composition orcombination of compositions; and in some embodiments may comprise,consist essentially of, or consist of silicon dioxide.

Electrically conductive gate material 26 extends along the upper portionof pillar 14, and is spaced from the semiconductor material 12 by gatedielectric material 24. The electrically conductive gate material maycomprise any suitable composition or combination of compositions; and insome embodiments may comprise, consist essentially of, or consist of oneor more of various metals (for example, tungsten, titanium, etc.),metal-containing compositions (for instance, metal nitride, metalcarbide, metal silicide, etc.), and conductively-doped semiconductormaterials (for instance, conductively-doped silicon, conductively-dopedgermanium, etc.).

The gate material 26 and gate dielectric material 24 surround a channelregion 28 of a transistor 34. The top view of FIG. 1A shows source/drainregions 30 and 32 formed within semiconductor material on opposing sidesof a gate 27 comprising gate material 26. In operation, source/drainregions 30 and 32 are gatedly connected to one another through gate 27;and specifically are gatedly connected through electrical flow alongchannel region 28.

The gate 27 may extend to any suitable depth relative to pillar 14, andin some embodiments a bottom of the gate may be less than or equal toabout 0.4 microns deep. Junction regions are present where thesource/drain regions 30 and 32 interface with semiconductor material 12(such junction regions are not visible in the views of FIGS. 1 and 1A).In some embodiments, the junction regions may be within about 0.2 micronof the bottom of gate 27 (i.e., the depths of the junction regions maybe within a range of from the depth of the bottom of the gate plus about0.2 microns to the depth of the bottom of the gate minus about 0.2microns).

Transistor 34 may be utilized in any of numerous applications; and may,for example, be incorporated into logic circuitry and/or memorycircuitry. In some example applications, transistor 34 may be utilizedin DRAM circuitry by connecting one of the source/drain regions 30 and32 to a charge-storage device (for instance, a capacitor) and the otherto a bitline. Accordingly, the transistor 34 may be incorporated into aDRAM unit cell. Such unit cell may be one of a large plurality ofsubstantially identical unit cells utilized in a DRAM array.

Another example transistor construction is described with reference to aconstruction 10 a in FIGS. 2 and 2A. Similar numbering will be utilizedin describing FIGS. 2 and 2A as is used above in describing FIGS. 1 and1A where appropriate.

Construction 10 a includes a pillar 14 of semiconductor material 12, andcomprises electrically insulative material 16 along sidewalls of pillar14.

The pillar 14 of FIGS. 2 and 2A comprises a narrow stem 40 joining to awide cap 42. In some embodiments, narrow stem 40 may be referred to as awaist region, and cap 42 may be referred to as a wide region. Gatedielectric material 24 extends along an upper portion of the pillar 14;and specifically extends along a portion of the narrow stem 40 and alongan entirety of the wide cap 42.

Electrically conductive gate material 26 extends along the upper portionof pillar 14, and is spaced from the semiconductor material 12 by gatedielectric material 24.

The gate material 26 and gate dielectric material 24 surround a channelregion 44 of a transistor 46. The transistor includes source/drainregions 30 and 32 formed within semiconductor material on opposing sidesof a gate 27 comprising gate material 26.

The transistors 34 and 46 of FIGS. 1 and 2 may advantageously consumeless die area than conventional transistors for given performance due toincreasing effective width, while also providing immunity towards hotelectron induced punchthrough (HEIP) degradation and other punchthroughleakage mechanisms, thereby providing improved performance andreliability as compared to conventional transistors.

The transistors 34 and 46 of FIGS. 1 and 2 may be incorporated intomemory arrays. FIGS. 3 and 4 illustrate regions of constructions 10 and10 a, respectively; comprising pluralities of transistors such as may beutilized in memory arrays.

Some embodiments pertain to methods of forming transistors of the typesillustrated in FIGS. 1 and 2. Example methods are described withreference to FIGS. 5-20; with FIGS. 5-12 pertaining to an example methodof forming transistors of the type described in FIGS. 1 and 3, and withFIGS. 13-20 pertaining to an example method of forming transistors ofthe type described in FIGS. 2 and 4.

Referring to FIG. 5, construction 10 comprises semiconductor material12, and comprises a plurality of electrically insulative regions 50-53extending into material 12. The insulative regions 50-53 may be formedby initially forming cavities 49 extending into material 12, and thenfilling the cavities with one or more insulative compositions. Forinstance, in the shown embodiment the cavities are lined with a firstinsulative composition 54, and then filled with a second insulativecomposition 56. In some embodiments, the first insulative compositionmay comprise silicon dioxide, and the second insulative composition maycomprise silicon nitride. The material within cavities 49 may bereferred to as first insulative material 59; and accordingly in theshown embodiment such first insulative material comprises the twodifferent compositions 54 and 56. In other embodiments the firstinsulative material may comprise a single homogeneous composition, andin yet other embodiments the first insulative material may comprise morethan two separate compositions.

A planarized surface 57 extends across the first insulative 59 andsemiconductor material 12. Such surface may be formed utilizing anysuitable processing, including, for example, chemical-mechanicalpolishing (CMP).

A protective material 58 is formed across the planarized upper surface57. The protective material protects an upper surface of semiconductormaterial 12 during subsequent etching of a liner (described below), andduring etching of first insulative material 59. Material 58 may compriseany material suitable for providing such protection. Material 58 is asacrificial material, and accordingly may comprise electricallyconductive compositions and/or electrically insulative compositions. Insome embodiments, material 58 may comprise one or more of metal,metal-containing compositions, metal-containing oxide, carbon, etc.

Referring to FIG. 6, material 58 is patterned to form recesses 60extending therethrough, and an upper portion of the first insulativematerial 59 is removed to extend such recesses into the cavities 49. Thematerial 58 may be patterned utilizing any suitable methodology,including, for example, utilization of a photolithographically-patternedphotoresist mask (not shown), and/or a sublithographic mask (not shown).

Liner material 62 is formed within recesses 60, and in the shownembodiment also extends across an upper surface of protective material58. The liner material is subsequently utilized to protect a region ofsemiconductor material 12 during etching of insulative material 59, andduring etching of another region of material 12. The liner material maycomprise any composition suitable for such purpose. The liner materialis a sacrificial material, and accordingly may comprise an insulativecomposition or a conductive composition. In some embodiments, material62 may comprise one or more of metal, metal-containing compositions,metal-containing oxide, carbon, etc.

Referring to FIG. 7, material 62 is subjected to an anisotropic etchwhich patterns material 62 into liners 64 along sidewalls of recesses60.

Referring to FIG. 8, an additional portion of first insulative 59 isremoved to expose segments 66 of semiconductor material 12. The exposedsegments are vertically between the liner material 62 and the firstinsulative material 59.

Referring to FIG. 9, semiconductor material 12 is isotropically etchedthrough the exposed segments 66 (FIG. 8). The isotropic etchingtransforms recesses 60 (FIG. 8) into openings 68 having narrow upperregions 70 and wide, bulbous lower regions 72. The illustrated shape ofregions 72 is one of many bulbous shapes that may be formed. Etchingconditions may be altered to achieve desired shapes. In some exampleembodiments, the regions 72 may have sharper corners adjacent materials62 and 54 than is shown, and/or the regions 72 may have larger radiithan is shown.

Referring to FIG. 10, liner material 62 (FIG. 9) is removed, as isprotective material 58 (FIG. 9). The semiconductor material 12 of FIG.10 has been patterned into a plurality of pillars 14 analogous to thepillar described above with reference to FIG. 1.

Referring to FIG. 11, gate dielectric material 24 is formed alongsidewalls of openings 68, and gate material 26 is formed within theopenings and over the gate dielectric material. The gate materialextends over regions of semiconductor material 12 between opening 68.

Referring to FIG. 12, openings 74 are formed to extend through the gatematerial 26 within openings 68 (FIG. 11), and then the openings 74 arefilled with second insulative material 76. Such second insulativematerial may comprise any suitable composition or combination ofcompositions; and in some embodiments may comprise one or both ofsilicon dioxide and silicon nitride. In some embodiments, secondinsulative material 76 may comprise a composition in common with firstinsulative material 59; and in other embodiments second insulativematerial 76 may comprise entirely different compositions relative to thefirst insulative material 59.

The second insulative material splits gate material 26 within eachopening 68 (such gate material is shown in FIG. 11) into two portionswhich are electrically isolated from one another, and which correspondto transistor gates 27. Each of the transistor gates extends from oneopening 68 to another (with the openings 68 being shown in FIG. 11), andwraps around a pillar of semiconductor material between the openings.

A planarized surface 75 extends across materials 26 and 76. Suchplanarized surface may be formed with any suitable processing, and insome embodiments may be formed utilizing CMP.

The construction of FIG. 12 comprises a plurality of transistors 34analogous to the transistor described above with reference to FIG. 1. Atop view of FIG. 12 is shown in FIG. 12A to illustrate that source/drainregions 30 and 32 may be formed on opposing sides of gates 27.

Another example processing sequence of forming transistors is describedwith reference to FIGS. 13-20.

FIG. 13 shows a construction 10 a comprising semiconductor material 12,comprising a protective material 80 over material 12, and comprising apatterned mask 82 over material 80. The mask 82 comprises maskingmaterial 84. The patterned masking material 84 may comprise any suitablecomposition or combination of compositions; including, for example,photolithographically patterned photoresist and/or sub-lithographicallypatterned material (such as material patterned utilizingpitch-multiplication methodologies).

Protective material 80 may comprise any suitable composition orcombination of compositions; and in some embodiments may comprisesilicon nitride and/or silicon dioxide.

Gaps 86 extend through patterned mask 82.

Referring to FIG. 14, gaps 86 (FIG. 13) are extended into semiconductormaterial 12 to form recesses 60, and liner material 62 is formed withinthe recesses. The liner material may comprise any suitable compositionor combination of compositions; and in some embodiments may comprisesilicon nitride and/or silicon dioxide.

Referring to FIG. 15, material 62 is subjected to an anisotropic etchwhich patterns material 62 into liners 64 along sidewalls of recesses60. After material 62 is etched, segments 88 of semiconductor material12 are exposed along bottoms of recesses 60.

In the shown embodiment, masking material 84 (FIG. 14) is removed priorto, or during, the anisotropic etching of liner material 62.

Referring to FIG. 16, semiconductor material 12 is isotropically etchedthrough the exposed segments 88 (FIG. 15). The isotropic etchingtransforms recesses 60 (FIG. 15) into openings 90 having narrow upperregions 92 and wide, bulbous lower regions 94. The illustrated shape ofregions 94 is one of many bulbous shapes that may be formed. Etchingconditions may be altered to achieve desired shapes. The semiconductormaterial 12 of FIG. 16 is patterned into a plurality of pillars 14analogous to the pillar described above with reference to FIG. 2.

Referring to FIG. 17, insulative compositions 98 and 100 are formedwithin openings 90. The compositions 98 and 100 may comprise silicondioxide and silicon nitride, respectively, in some embodiments. Theliner material 62 and protective material 80 are shown remaining alongsemiconductor material 12 at the processing stage of FIG. 17. In otherembodiments, one or both of materials 62 and 80 may be removed prior toforming compositions 98 and 100; and in such embodiments material 98 mayextend along the narrow upper regions 92 of openings 90, and/or acrossupper surfaces of pillars 14. The compositions 98 and 100 may betogether referred to as a first insulative material 96 in someembodiments.

Referring to FIG. 18, liner material 62 (FIG. 17) and protectivematerial 80 (FIG. 17) are removed. The first insulative material 96 isrecessed within openings 90 until the wide lower regions 94 of theopenings are only partially filled with insulative material 96. In someembodiments, the wide regions may be more than half-filled withinsulative material 96 at the processing stage of FIG. 18, and in otherembodiments there may be less than half-filled.

In the shown embodiment of FIG. 18, composition 100 is recessed furtherthan composition 98. In other embodiments, compositions 98 and 100 maybe recessed to about a same extent as one another, and in yet otherembodiments composition 98 may be recessed further than composition 100.

Referring to FIG. 19, gate dielectric material 24 is formed alongsidewalls of openings 90, and gate material 26 is formed within theopenings and over the gate dielectric material. The gate material 26 andgate dielectric material 24 extend over regions of semiconductormaterial 12 between openings 90.

Referring to FIG. 20, openings 104 are formed to extend through the gatematerial 26 within openings 90 (FIG. 19), and then the openings 104 arefilled with second insulative material 106. Such second insulativematerial may comprise any suitable composition or combination ofcompositions; and in some embodiments may comprise one or both ofsilicon dioxide and silicon nitride. In some embodiments, secondinsulative material 106 may comprise a composition in common with firstinsulative material 96, and in other embodiments second insulativematerial 106 may comprise entirely different compositions relative tothe first insulative material 96.

The second insulative material 106 splits gate material 26 within eachopening 90 (such gate material is shown in FIG. 19) into two portionswhich are electrically isolated from one another, and which correspondto transistor gates 27. Each of the transistor gates extends from oneopening 90 to another (with the openings 90 being shown in FIG. 19), andwraps around a pillar of semiconductor material between the openings.

A planarized surface 107 extends across materials 26 and 106. Suchplanarized surface may be formed with any suitable processing, and insome embodiments may be formed utilizing CMP.

The construction of FIG. 20 comprises a plurality of transistors 46analogous to the transistor described above with reference to FIG. 2. Atop view of FIG. 20 is shown in FIG. 20A to illustrate that source/drainregions 30 and 32 may be formed on opposing sides of gates 27.

The structures and devices discussed above may be incorporated intoelectronic systems. Such electronic systems may be used in, for example,memory modules, device drivers, power modules, communication modems,processor modules, and application-specific modules, and may includemultilayer, multichip modules. The electronic systems may be any of abroad range of systems, such as, for example, clocks, televisions, cellphones, personal computers, automobiles, industrial control systems,aircraft, etc.

Unless specified otherwise, the various materials, substances,compositions, etc. described herein may be formed with any suitablemethodologies, either now known or yet to be developed, including, forexample, atomic layer deposition (ALD), chemical vapor deposition (CVD),physical vapor deposition (PVD), etc.

The terms “dielectric” and “electrically insulative” are both utilizedto describe materials having insulative electrical properties. Bothterms are considered synonymous in this disclosure. The utilization ofthe term “dielectric” in some instances, and the term “electricallyinsulative” in other instances, is to provide language variation withinthis disclosure to simplify antecedent basis within the claims thatfollow, and is not utilized to indicate any significant chemical orelectrical differences.

The particular orientation of the various embodiments in the drawings isfor illustrative purposes only, and the embodiments may be rotatedrelative to the shown orientations in some applications. The descriptionprovided herein, and the claims that follow, pertain to any structuresthat have the described relationships between various features,regardless of whether the structures are in the particular orientationof the drawings, or are rotated relative to such orientation.

The cross-sectional views of the accompanying illustrations only showfeatures within the planes of the cross-sections, and do not showmaterials behind the planes of the cross-sections in order to simplifythe drawings.

When a structure is referred to above as being “on” or “against” anotherstructure, it can be directly on the other structure or interveningstructures may also be present. In contrast, when a structure isreferred to as being “directly on” or “directly against” anotherstructure, there are no intervening structures present. When a structureis referred to as being “connected” or “coupled” to another structure,it can be directly connected or coupled to the other structure, orintervening structures may be present. In contrast, when a structure isreferred to as being “directly connected” or “directly coupled” toanother structure, there are no intervening structures present.

Some embodiments include a method of forming a transistor. Spaced-apartrecesses are formed to extend into semiconductor material. The recesseshave upper regions lined with liner material and have segments ofsemiconductor material exposed along lower regions. Semiconductormaterial is isotropically etched through the exposed segments while theupper regions remain protected with the liner material. The isotropicetching transforms the recesses into openings having wide lower regionsbeneath narrow upper regions. The liner material is removed. Gatedielectric material is formed along sidewalls of the openings. Gatematerial is formed within the openings and over regions of thesemiconductor material between the openings. Insulative material isformed down the center of each opening and entirely through the gatematerial. The insulative material splits the gate material within eachopening into two isolated portions. A segment of gate material extendsfrom one of the openings to the other, and wraps around a pillar of thesemiconductor material between the openings. The segment is a gate of atransistor. Source/drain regions are formed on opposing sides of thegate.

Some embodiments include a method of forming a transistor. Spaced-apartrecesses are formed to extend into semiconductor material. Sidewalls ofthe recesses are lined with liner material while leaving bottoms of therecesses exposed. Semiconductor material is isotropically etched throughthe exposed bottoms of the recesses while the sidewalls remain protectedwith the liner material. The isotropic etching transforms the recessesinto openings having bulbous lower regions beneath narrow upper regions.The liner material is removed. Gate dielectric material is formed alongsidewalls of the openings. Gate material is formed within the openingsand over regions of the semiconductor material between the openings.Insulative material is formed down the center of each opening andentirely through the gate material. The insulative material splits thegate material within each opening into two isolated portions. A segmentof gate material extends from one of the openings to the other, andwraps around a pillar of the semiconductor material between theopenings. The segment is a gate of a transistor. Source/drain regionsare formed on opposing sides of the gate.

Some embodiments include a method of forming a transistor. Spaced-apartcavities are formed to extend into semiconductor material, and thecavities are filled with first insulative material. Some the firstinsulative material is removed from the cavities to leave recessesextending into the cavities. Liner material is formed along sidewalls ofthe recesses. After the liner material is formed, some of the firstinsulative material is removed to leave exposed segments ofsemiconductor material between the liner material and the firstinsulative material. Semiconductor material is isotropically etchedthrough the exposed segments while the sidewalls remain protected withthe liner material. The isotropic etching transforms the recesses intoopenings having bulbous lower regions beneath narrow upper regions. Theliner material is removed. Gate dielectric material is formed alongsidewalls of the openings. Gate material is formed within the openingsand over regions of the semiconductor material between the openings.Second insulative material is formed down the center of each opening andentirely through the gate material. The second insulative materialsplits the gate material within each opening into two isolated portions.A segment of gate material extends from one of the openings to theother, and wraps around a pillar of the semiconductor material betweenthe openings. The segment is a gate of a transistor. Source/drainregions are formed on opposing sides of the gate.

In compliance with the statute, the subject matter disclosed herein hasbeen described in language more or less specific as to structural andmethodical features. It is to be understood, however, that the claimsare not limited to the specific features shown and described, since themeans herein disclosed comprise example embodiments. The claims are thusto be afforded full scope as literally worded, and to be appropriatelyinterpreted in accordance with the doctrine of equivalents.

We claim:
 1. A method of forming a transistor, comprising: forming apair of spaced-apart recesses extending into semiconductor material, therecesses having upper regions lined with liner material and havingsegments of semiconductor material exposed along lower regions;isotropically etching semiconductor material through the exposedsegments while the upper regions remain protected with the linermaterial; the isotropic etching transforming the recesses into openingshaving wide lower regions beneath narrow upper regions; removing theliner material; forming gate dielectric material along sidewalls of theopenings; forming gate material within the openings and over regions ofthe semiconductor material between the openings; forming insulativematerial down the center of each opening and entirely through the gatematerial; the insulative material splitting the gate material withineach opening into two isolated portions; a segment of gate materialextending from one of the openings to the other, and wrapping around apillar of the semiconductor material between the openings; said segmentbeing a gate of a transistor; and forming source/drain regions onopposing sides of the gate.
 2. The method of claim 1 wherein the gatematerial extends to a depth of less than or equal to about 0.4 micronswithin the semiconductor material.
 3. The method of claim 1 wherein thewide regions are bulbous regions.
 4. The method of claim 1 wherein thepillar has a shape of a narrow waist region extending upwardly to a wideregion, and wherein the gate material is along a region of the narrowwaist and under the wide region.
 5. The method of claim 1 wherein thepillar has a shape of a first wide region, narrow region over the firstwide region, and second wide region over the narrow region; and whereinthe gate material is along the narrow region and second wide region, andalong a portion of the first wide region.
 6. The method of claim 1wherein the insulative material comprises silicon nitride.
 7. The methodof claim 1 wherein bottoms of the recesses are along semiconductormaterial.
 8. The method of claim 1 wherein the insulative material issecond insulative material, and further comprising forming firstinsulative material within the openings prior to forming the gatematerial.
 9. The method of claim 8 wherein the first insulative materialis formed to fill the openings, and is recessed to only partially fillthe openings prior to forming the gate material.
 10. The method of claim9 wherein the first and second insulative materials comprise a commoncomposition as one another.
 11. The method of claim 10 wherein the firstand second insulative materials both comprise silicon nitride.
 12. Themethod of claim 9 wherein the first and second insulative materials donot comprise a common composition as one another.
 13. The method ofclaim 1 wherein the insulative material is second insulative material,and wherein bottoms of the recesses are along first insulative material.14. The method of claim 13 wherein the first insulative materialcomprises silicon nitride.
 15. The method of claim 13 wherein the firstinsulative material comprises silicon dioxide and silicon nitride.
 16. Amethod of forming a transistor, comprising: forming a pair ofspaced-apart recesses extending into semiconductor material; liningsidewalls of the recesses with liner material while leaving bottoms ofthe recesses exposed; isotropically etching semiconductor materialthrough the exposed bottoms of the recesses while the sidewalls remainprotected with the liner material; the isotropic etching transformingthe recesses into openings having bulbous lower regions beneath narrowupper regions; removing the liner material; forming gate dielectricmaterial along sidewalls of the openings; forming gate material withinthe openings and over regions of the semiconductor material between theopenings; forming insulative material down the center of each openingand entirely through the gate material; the insulative materialsplitting the gate material within each opening into two isolatedportions; a segment of gate material extending from one of the openingsto the other, and wrapping around a pillar of the semiconductor materialbetween the openings; said segment being a gate of a transistor; andforming source/drain regions on opposing sides of the gate.
 17. Themethod of claim 16 wherein the pillar has a shape of a narrow stemextending upwardly to a wide cap, and wherein the gate material is alonga region of the narrow stem and under the wide cap.
 18. The method ofclaim 16 wherein the insulative material is a second insulativematerial, and further comprising: filling the openings with firstinsulative material; recessing the first insulative material until thebulbous lower regions are only partially filled with the firstinsulative material; and forming the gate material within thepartially-filled openings.
 19. The method of claim 18 wherein thepartially-filled openings have bulbous regions more than half-filledwith the first insulative material.
 20. The method of claim 18 whereinthe partially-filled openings have bulbous regions less than half-filledwith the first insulative material.
 21. The method of claim 18 whereinthe first and second insulative materials comprise a same composition asone another.
 22. The method of claim 18 wherein the first and secondinsulative materials both comprise silicon nitride.
 23. The method ofclaim 18 wherein the first and second insulative materials comprisedifferent compositions relative to one another.
 24. A method of forminga transistor, comprising: forming a pair of spaced-apart cavitiesextending into semiconductor material, and filling the cavities withfirst insulative material; removing some the first insulative materialfrom the cavities to leave recesses extending into the cavities, andforming liner material along sidewalls of the recesses; after formingthe liner material, removing some of the first insulative material toleave exposed segments of semiconductor material between the linermaterial and the first insulative material; isotropically etchingsemiconductor material through the exposed segments while the sidewallsremain protected with the liner material; the isotropic etchingtransforming the recesses into openings having bulbous lower regionsbeneath narrow upper regions; removing the liner material; forming gatedielectric material along sidewalls of the openings; forming gatematerial within the openings and over regions of the semiconductormaterial between the openings; forming second insulative material downthe center of each opening and entirely through the gate material; thesecond insulative material splitting the gate material within eachopening into two isolated portions; a segment of gate material extendingfrom one of the openings to the other, and wrapping around a pillar ofthe semiconductor material between the openings; said segment being agate of a transistor; and forming source/drain regions on opposing sidesof the gate.
 25. The method of claim 24 wherein the pillar has a shapeof a narrow waist region extending upwardly to a wide region, andwherein the gate material is along the narrow waist region and under thewide region.
 26. The method of claim 24 wherein the pillar has a shapeof a first wide region, narrow region over the first wide region, andsecond wide region over the narrow region; and wherein the gate materialis along the narrow region and second wide region, and along a portionof the first wide region.
 27. The method of claim 24 wherein the firstinsulative material comprises silicon nitride.
 28. The method of claim24 wherein the first insulative material comprises silicon dioxide. 29.The method of claim 24 wherein the first insulative material comprisessilicon dioxide and silicon nitride.
 30. The method of claim 24 whereinthe second insulative material comprises silicon nitride.
 31. The methodof claim 24 wherein the first and second insulative materials comprisesa same composition as one another.
 32. The method of claim 24 whereinthe first and second insulative materials comprises differentcompositions relative to one another.